The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Jun. 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Kuo-Cheng Chiang, Hsinchu County, TW;
Chih-Hao Wang, Hsinchu County, TW;
Guan-Lin Chen, Hsinchu County, TW;
Shi Ning Ju, Hsinchu City, TW;
Jung-Chien Cheng, Tainan City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A vertically protruding structure is formed. The vertically protruding structure includes a substrate, a first semiconductor layer disposed over the substrate, a channel layer disposed over the first semiconductor layer, and a second semiconductor layer disposed over the channel layer. The first semiconductor layer and the second semiconductor layer each contain a first type of semiconductive material. The channel layer contains a second type of semiconductive material different from the first type. First recesses are formed in the first semiconductor layer and the second semiconductor layer. Each of the first recesses protrudes laterally inward. The first recesses are filled with dielectric spacers. The channel layer and the substrate are laterally trimmed. The remaining portions of the channel layer and the dielectric spacers define second recesses that protrude laterally inward. Gate structures are formed in the second recesses.