Semiconductor device structure including forksheet transistors and methods of forming the same

Abstract

A semiconductor device structure, along with methods of forming such, are described. The structure includes a dielectric feature comprising a first dielectric layer and a second dielectric layer, the first dielectric layer has a first sidewall and a second sidewall opposing the first sidewall, and the second dielectric layer is in contact with at least a portion of the first sidewall and at least a portion of the second sidewall. The structure also includes a first semiconductor layer adjacent the first sidewall, wherein the first semiconductor layer is in contact with the second dielectric layer. The structure further includes a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, wherein the first gate electrode layer has a surface facing the second dielectric layer, and the surface extends over a plane defined by an interface between the second dielectric layer and the first semiconductor layer.