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For the Inventor, By the Inventor

Pflugerville, TX, United States of America

Gregory S Spencer

USPTO Granted Patents = 17 

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 711(Granted Patents)


Location History:

  • Pflugerville, TX (US) (2005 - 2014)
  • Hutto, TX (US) (2015)

Company Filing History:

goldMedal17 out of 5,491 
 
Freescale Semiconductor,inc.
 patents

Years Active: 2005-2015

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17 patents (USPTO):
1. 9209078 - Method of making a die with recessed aluminum die pads (2015-12-08),
2. 8722530 - Method of making a die with recessed aluminum die pads (2014-05-13),
3. 8242564 - Semiconductor device with photonics (2012-08-14),
4. 8093084 - Semiconductor device with photonics (2012-01-10),
5. 7911002 - Semiconductor device with selectively modulated gate work function (2011-03-22),
6. 7871854 - Method of making a vertical photodetector (2011-01-18),
7. 7846803 - Multiple millisecond anneals for semiconductor device fabrication (2010-12-07),
8. 7790528 - Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation (2010-09-07),
9. 7754587 - Silicon deposition over dual surface orientation substrates to promote uniform polishing (2010-07-13),
10. 7749829 - Step height reduction between SOI and EPI for DSO and BOS integration (2010-07-06),
11. 7659156 - Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer (2010-02-09),
12. 7575968 - Inverse slope isolation and dual surface orientation integration (2009-08-18),
13. 7479465 - Transfer of stress to a layer (2009-01-20),
14. 7416605 - Anneal of epitaxial layer in a semiconductor device (2008-08-26),
15. 7378306 - Selective silicon deposition for planarized dual surface orientation integration (2008-05-27),

Title: Gregory S. Spencer: Innovator in Semiconductor Technology

Introduction

Gregory S. Spencer is a prominent inventor based in Pflugerville, TX (US), known for his significant contributions to semiconductor technology. With a total of 17 patents to his name, Spencer has made a lasting impact in the field of electronics and device manufacturing.

Latest Patents

One of Spencer's latest patents is a method of making a die with recessed aluminum die pads. This innovative method involves several steps, including forming an electrical interconnect layer and a first dielectric layer over the interconnect layer. The process continues with the formation of an opening in the first dielectric layer, followed by the creation of an aluminum layer that is etched to form an aluminum die pad. A second dielectric layer is then formed over the aluminum die pad and the first dielectric layer, culminating in the formation of a conductive via that contacts a second electrical interconnect of the interconnect layer.

Career Highlights

Gregory S. Spencer is currently employed at Freescale Semiconductor, Inc., where he continues to develop cutting-edge technologies. His work has been instrumental in advancing semiconductor device manufacturing processes, making them more efficient and reliable.

Collaborations

Throughout his career, Spencer has collaborated with notable colleagues, including Mariam G. Sadaka and Robert E. Jones. These partnerships have fostered innovation and contributed to the successful development of various semiconductor technologies.

Conclusion

Gregory S. Spencer's contributions to the field of semiconductor technology are noteworthy, with his innovative methods and collaborative efforts paving the way for advancements in the industry. His work continues to influence the future of electronics and device manufacturing.

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