The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2011
Filed:
Aug. 19, 2009
Gregory S. Spencer, Pflugerville, TX (US);
Robert E. Jones, Austin, TX (US);
Gregory S. Spencer, Pflugerville, TX (US);
Robert E. Jones, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method includes forming a first opening in a top surface of a semiconductor substrate, performing an implant into the top surface to form a doped region, epitaxially growing a semiconductor layer in the first opening along a bottom of the first opening and along sidewalls of the first opening, wherein the epitaxially growing comprises in-situ doping the semiconductor layer, filling the first opening with a dielectric material, forming a second opening in the dielectric material, wherein a bottom of the second opening exposes the epitaxially grown semiconductor layer and sidewalls of the second opening expose the dielectric material; and filling the second opening with a semiconductor material, wherein the semiconductor material comprises a top electrode and a bottom electrode. The bottom electrode is in electrical contact with the semiconductor layer which is in electrical contact with the doped region. The doped region is laterally adjacent the semiconductor material.