The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2010
Filed:
Apr. 18, 2007
Voon-yew Thean, Austin, TX (US);
Marc Rossow, Austin, TX (US);
Gregory S. Spencer, Pflugerville, TX (US);
Tab A. Stephens, Buda, TX (US);
Dina H. Triyoso, Austin, TX (US);
Victor H. Vartanian, Dripping Springs, TX (US);
Voon-Yew Thean, Austin, TX (US);
Marc Rossow, Austin, TX (US);
Gregory S. Spencer, Pflugerville, TX (US);
Tab A. Stephens, Buda, TX (US);
Dina H. Triyoso, Austin, TX (US);
Victor H. Vartanian, Dripping Springs, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor device is provided which comprises a semiconductor layer (), a dielectric layer (), first and second gate electrodes () having first and second respective work functions associated therewith, and a layer of hafnium oxide () disposed between said dielectric layer and said first and second gate electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile