Marc A Rossow

USPTO Granted Patents = 9 (Patent Applications = 2)

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 29(Granted Patents)

Company Filing History:

8 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2004-2014

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8884358 - Method of making a non-volatile memory (NVM) cell structure (2014-11-11),

2. 8021970 - Method of annealing a dielectric layer (2011-09-20),

3. 7911002 - Semiconductor device with selectively modulated gate work function (2011-03-22),

4. 7799634 - Method of forming nanocrystals (2010-09-21),

5. 7659156 - Method to selectively modulate gate work function through selective Ge condensation and high-K dielectric layer (2010-02-09),

6. 7125805 - Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing (2006-10-24),

7. 6949455 - Method for forming a semiconductor device structure a semiconductor layer (2005-09-27),

8. 6881681 - Film deposition on a semiconductor wafer (2005-04-19),

9. 6689676 - Method for forming a semiconductor device structure in a semiconductor layer (2004-02-10),

Title: The Innovative Contributions of Marc A. Rossow

Introduction

Marc A. Rossow is a prominent inventor based in Austin, TX, known for his significant contributions to the field of non-volatile memory technology. With a total of 9 patents to his name, Rossow has made remarkable advancements that have influenced the electronics industry.

Latest Patents

Among his latest patents is a method of making a non-volatile memory (NVM) cell structure. This innovative device includes a substrate and a charge storage layer, which comprises a bottom layer of oxide, a layer of discrete charge storage elements on the bottom layer, and a top layer of oxide on the charge storage elements. A control gate is positioned on the top layer of oxide, ensuring that the surface facing the control gate is substantially planar. Another notable patent is a method of annealing a dielectric layer. This method involves forming a first dielectric layer over a substrate, creating nanoclusters over the first layer, and then forming a second dielectric layer over the nanoclusters. The second layer is annealed using nitrous oxide, followed by the formation of a gate electrode over it.

Career Highlights

Marc A. Rossow has worked with leading companies in the technology sector, including Freescale Semiconductor, Inc. and Motorola Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of memory technology.

Collaborations

Throughout his career, Rossow has collaborated with notable professionals in the field, including Sung-Taeg Kang and Jinmiao James Shen. These collaborations have further enriched his work and expanded the impact of his inventions.

Conclusion

Marc A. Rossow's contributions to non-volatile memory technology and his extensive patent portfolio highlight his role as a key innovator in the electronics industry. His work continues to influence advancements in memory devices, showcasing the importance of innovation in technology.

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