The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2004
Filed:
Jul. 26, 2002
Daniel Thanh-Khac Pham, Austin, TX (US);
Al T. Koh, Cedar Park, TX (US);
Yeong-Jyh T. Lii, Austin, TX (US);
Robert F. Steimle, Austin, TX (US);
Anne Vandooren, Austin, TX (US);
Ricardo Garcia, Round Rock, TX (US);
Kimberly G. Reid, Austin, TX (US);
Marc Rossow, Austin, TX (US);
James P. Geren, Pflugerville, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for providing gates of transistors with at least two different work functions utilizes a silicidation of two different metals at different times, silicidation for one gate and polysilicon for the other, or silicidation using a single metal with two differently doped silicon structures. Thus the problem associated with performing silicidation of two different metals at the same time is avoided. If the two metals have significantly different silicidation temperatures, the one with the lower temperature silicidation will likely have significantly degraded performance as a result of having to also experience the higher temperature required to achieve silicidation with the other metal.