The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Jul. 28, 2006
Gregory S. Spencer, Pflugerville, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Narayanan C. Ramani, Austin, TX (US);
Vishal P. Trivedi, Austin, TX (US);
Gregory S. Spencer, Pflugerville, TX (US);
Venkat R. Kolagunta, Austin, TX (US);
Narayanan C. Ramani, Austin, TX (US);
Vishal P. Trivedi, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A strained semiconductor layer is achieved by a method for transferring stress from a dielectric layer to a semiconductor layer. The method comprises providing a substrate having a semiconductor layer. A dielectric layer having a stress is formed over the semiconductor layer. A radiation anneal is applied over the dielectric layer of a duration not exceeding 10 milliseconds to cause the stress of the dielectric layer to create a stress in the semiconductor layer. The dielectric layer may then be removed. At least a portion of the stress in the semiconductor layer remains in the semiconductor layer after the dielectric layer is removed. The radiation anneal can be either by using either a laser beam or a flash tool. The radiation anneal can also be used to activate source/drain regions.