The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Jan. 08, 2007
Stefan Zollner, Austin, TX (US);
Veeraraghavan Dhandapani, Round Rock, TX (US);
Paul A. Grudowski, Austin, TX (US);
Gregory S. Spencer, Pflugerville, TX (US);
Stefan Zollner, Austin, TX (US);
Veeraraghavan Dhandapani, Round Rock, TX (US);
Paul A. Grudowski, Austin, TX (US);
Gregory S. Spencer, Pflugerville, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An anneal of an epitaxially grown crystalline semiconductor layer comprising a combination of group-IV elements. The layer contains at least one of the group of carbon and tin. The layer of epitaxially grown material is annealed at a temperature substantially in a range of 1,000 to 1,400 degrees Celsius for a period not to exceed 100 milliseconds within 10% of the peak temperature. The anneal is performed for example with a laser anneal or a flash lamp anneal. The limited-time anneal may improve carrier mobility of a transistor.