The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
May. 01, 2007
Gregory S. Spencer, Pflugerville, TX (US);
John M. Grant, Austin, TX (US);
Gauri V. Karve, Austin, TX (US);
Gregory S. Spencer, Pflugerville, TX (US);
John M. Grant, Austin, TX (US);
Gauri V. Karve, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A semiconductor process and apparatus provide a planarized hybrid substrate () by thermally oxidizing SOI sidewalls () in a trench opening () to form SOI sidewall oxide spacers () which are trimmed while etching through a buried oxide layer () to expose the underlying bulk substrate () for subsequent epitaxial growth of an epitaxial semiconductor layer (). In this way, SOI sidewall oxide spacers () are formed that prevent epitaxial SOI sidewalls from being formed in the trench opening () during the epitaxial growth step, and that can be readily removed during any subsequent STI etch process