Company Filing History:

10 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2002-2013

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12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8445939 - Method of forming a semiconductor device and semiconductor device (2013-05-21),

2. 8076189 - Method of forming a semiconductor device and semiconductor device (2011-12-13),

3. 8039339 - Separate layer formation in a semiconductor device (2011-10-18),

4. 7879663 - Trench formation in a semiconductor material (2011-02-01),

5. 7790528 - Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation (2010-09-07),

6. 7015517 - Semiconductor device incorporating a defect controlled strained channel structure and method of making the same (2006-03-21),

7. 6919258 - Semiconductor device incorporating a defect controlled strained channel structure and method of making the same (2005-07-19),

8. 6908822 - Semiconductor device having an insulating layer and method for forming (2005-06-21),

9. 6891229 - Inverted isolation formed with spacers (2005-05-10),

10. 6831350 - Semiconductor structure with different lattice constant materials and method for forming the same (2004-12-14),

11. 6551922 - Method for making a semiconductor device by variable chemical mechanical polish downforce (2003-04-22),

12. 6423619 - Transistor metal gate structure that minimizes non-planarity effects and method of formation (2002-07-23),

Title: The Innovative Contributions of John M Grant

Introduction

John M Grant is a prominent inventor based in Austin, TX, known for his significant contributions to the field of semiconductor technology. With a total of 12 patents to his name, Grant has made remarkable advancements that have influenced the development of modern electronic devices.

Latest Patents

Among his latest patents is a method of forming a semiconductor device. This innovative method involves creating a control electrode over a portion of a semiconductor layer, followed by the formation of recesses extending into the semiconductor layer on opposing sides of the control electrode. Doped regions are then formed in the semiconductor layer through these recesses, which serve as current electrode regions of the semiconductor device. Each doped region extends into the semiconductor layer from at least the base of a recess. Additionally, the method includes the formation of strained semiconductor regions in the recesses, ensuring that a junction between each doped region and the semiconductor layer is established below the interface between the strained semiconductor region and the semiconductor layer.

Career Highlights

Throughout his career, John M Grant has worked with notable companies such as Freescale Semiconductor, Inc. and Motorola Corporation. His experience in these leading technology firms has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor devices.

Collaborations

Grant has collaborated with talented individuals in the industry, including Tab Allen Stephens and Bich-Yen Nguyen. These partnerships have further enhanced his work and led to the successful development of various technologies.

Conclusion

John M Grant's contributions to semiconductor technology are invaluable, and his innovative methods continue to shape the future of electronic devices. His extensive patent portfolio reflects his dedication to advancing the field and his impact on the industry will be felt for years to come.

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