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For the Inventor, By the Inventor

Fremont, CA, United States of America

Gongda Yao

USPTO Granted Patents = 31

Average Co-Inventor Count = 4.8

ph-index = 12

Forward Citations = 531(Granted Patents)


Location History:

  • Milpitas, CA (US) (2001)
  • Freemont, CA (US) (2003)
  • Fremont, CA (US) (1999 - 2018)

Company Filing History:

goldMedal30 out of 13,684 
 
Applied Materials, Inc.
 patents
silverMedal1 out of 23 
 
Applied Material, Inc.
 patents

Years Active: 1999-2018

where 'Filed Patents' based on already Granted Patents

31 patents (USPTO):
1. 9991157 - Method for depositing a diffusion barrier layer and a metal conductive layer (2018-06-05),
2. 9390970 - Method for depositing a diffusion barrier layer and a metal conductive layer (2016-07-12),
3. 8158511 - Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features (2012-04-17),
4. 7989343 - Method of depositing a uniform metal seed layer over a plurality of recessed semiconductor features (2011-08-02),
5. 7795138 - Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate (2010-09-14),
6. 7687909 - Metal / metal nitride barrier layer for semiconductor device applications (2010-03-30),
7. 7589016 - Method of depositing a sculptured copper seed layer (2009-09-15),
8. 7381639 - Method of depositing a metal seed layer on semiconductor substrates (2008-06-03),
9. 7253109 - Method of depositing a tantalum nitride/tantalum diffusion barrier layer system (2007-08-07),
10. 7074714 - Method of depositing a metal seed layer on semiconductor substrates (2006-07-11),
11. 6939801 - Selective deposition of a barrier layer on a dielectric material (2005-09-06),
12. 6919275 - Method of preventing diffusion of copper through a tantalum-comprising barrier layer (2005-07-19),
13. 6908865 - Method and apparatus for cleaning substrates (2005-06-21),
14. 6758947 - Damage-free sculptured coating deposition (2004-07-06),
15. 6528180 - Liner materials (2003-03-04),

Certainly! Here is the article about inventor Gongda Yao.

Title: Gongda Yao - Innovator in Semiconductor Feature Surface Technology

Introduction: Gongda Yao is a prolific inventor based in Fremont, CA, with a remarkable portfolio of 31 patents in the field of semiconductor technology. His groundbreaking work in depositing diffusion barrier and metal conductive layers using ion deposition sputtering has significantly advanced the industry.

Latest Patents: One of Gongda Yao's latest patents involves a method for depositing a diffusion barrier layer and a metal conductive layer on semiconductor feature surfaces. This innovative technique utilizes ion deposition sputtering to create sculptured layers, protecting the surface from erosion and contamination while enhancing the functionality of semiconductor features.

Career Highlights: Gongda Yao has made significant contributions to the field of semiconductor technology during his tenure at Applied Materials, Inc., a leading company in the industry. His expertise in deposition techniques and material sculpting has led to the development of cutting-edge solutions for semiconductor manufacturing processes.

Collaborations: Throughout his career, Gongda Yao has collaborated with industry experts such as Peijun Ding and Zheng Xu. These partnerships have been instrumental in the successful implementation of his innovative ideas and the commercialization of revolutionary semiconductor technologies.

Conclusion: Gongda Yao's dedication to innovation and his pioneering work in semiconductor feature surface technology have cemented his reputation as a trailblazer in the industry. With 31 patents to his name and a wealth of experience in semiconductor manufacturing, Gongda Yao continues to push the boundaries of what is possible in the field of semiconductor technology.

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