The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Mar. 10, 2008
Tony Chiang, Mountain View, CA (US);
Gongda Yao, Fremont, CA (US);
Peijun Ding, San Jose, CA (US);
Fusen E. Chen, Cupertino, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Zheng Xu, Foster City, CA (US);
Hong Zhang, Fremont, CA (US);
Tony Chiang, Mountain View, CA (US);
Gongda Yao, Fremont, CA (US);
Peijun Ding, San Jose, CA (US);
Fusen E. Chen, Cupertino, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Zheng Xu, Foster City, CA (US);
Hong Zhang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of applying a sculptured copper seed layer on a semiconductor feature surface using ion deposition sputtering. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material.