The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2010
Filed:
May. 30, 2007
Peijun Ding, Saratoga, CA (US);
Zheng Xu, Pleasanton, CA (US);
Hong Zhang, Fremont, CA (US);
Xianmin Tang, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Tony Chiang, Santa Clara, CA (US);
Gongda Yao, Fremont, CA (US);
Fusen E. Chen, Saratoga, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Peijun Ding, Saratoga, CA (US);
Zheng Xu, Pleasanton, CA (US);
Hong Zhang, Fremont, CA (US);
Xianmin Tang, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Tony Chiang, Santa Clara, CA (US);
Gongda Yao, Fremont, CA (US);
Fusen E. Chen, Saratoga, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.