The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 2007
Filed:
Feb. 28, 2005
Peijun Ding, Saratoga, CA (US);
Zheng Xu, Pleasanton, CA (US);
Hong Zhang, Fremont, CA (US);
Xianmin Tang, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Tony Chiang, Campbell, CA (US);
Gongda Yao, Fremont, CA (US);
Fusen E. Chen, Saratoga, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Peijun Ding, Saratoga, CA (US);
Zheng Xu, Pleasanton, CA (US);
Hong Zhang, Fremont, CA (US);
Xianmin Tang, San Jose, CA (US);
Praburam Gopalraja, San Jose, CA (US);
Suraj Rengarajan, San Jose, CA (US);
John C. Forster, San Francisco, CA (US);
Jianming Fu, Palo Alto, CA (US);
Tony Chiang, Campbell, CA (US);
Gongda Yao, Fremont, CA (US);
Fusen E. Chen, Saratoga, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick Taseed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the Taseed layer. Further, the Taseed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the Taseed layer. In another embodiment of the method, a Ta film is altered on its surface to form the Taseed layer.