The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
Jun. 25, 2009
Tony Chiang, Mountain View, CA (US);
Gongda Yao, Fremont, CA (US);
Peijun Ding, San Jose, CA (US);
Fusen E. Chen, Cupertino, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Zheng Xu, Foster City, CA (US);
Hong Zhang, Fremont, CA (US);
Tony Chiang, Mountain View, CA (US);
Gongda Yao, Fremont, CA (US);
Peijun Ding, San Jose, CA (US);
Fusen E. Chen, Cupertino, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Zheng Xu, Foster City, CA (US);
Hong Zhang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of the metal seed layer on the wafer via plasma deposition at a sufficient ratio of wafer substrate bias to DC source power that bottom coverage is achieved while resputtering of surfaces of the recessed device features is inhibited. The method also comprises depositing a second portion of the metal seed layer at a ration of substrate RF bias to DC source power such that resputtering is not inhibited.