The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Dec. 13, 2002
Hua Chung, San Jose, CA (US);
Ling Chen, Sunnyvale, CA (US);
Vincent W. Ku, San Jose, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Gongda Yao, Fremont, CA (US);
Hua Chung, San Jose, CA (US);
Ling Chen, Sunnyvale, CA (US);
Vincent W. Ku, San Jose, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Gongda Yao, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.