The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 05, 2018
Filed:
Jul. 08, 2016
Applied Materials, Inc., Santa Clara, CA (US);
Tony Chiang, Mountain View, CA (US);
Gongda Yao, Fremont, CA (US);
Peijun Ding, San Jose, CA (US);
Fusen E. Chen, Cupertino, CA (US);
Barry L. Chin, Saratoga, CA (US);
Gene Y. Kohara, Fremont, CA (US);
Zheng Xu, Foster City, CA (US);
Hong Zhang, Fremont, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.