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For the Inventor, By the Inventor

Shanghai, China

Gerald Zheyao Yin

This inventor holds 30 USPTO granted patents and 7 published patent applications, primarily in Plasma Processing. Top assignees: Applied Materials, Inc., Advanced Micro-Fabrication Equipment, Inc. Asia, Advanced Micro-Fabrication Equipment Inc. China. Active years: 1998-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gerald Zheyao Yin. Retrieved from https://idiyas.com/inventor/gerald-zheyao-yin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 30 

% Patents Active = 86.7

Average Co-Inventor Count = 4.0

ph-index = 17

Forward Citations = 1,305(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (1998 - 2001)
  • San Jose, CA (US) (2001 - 2006)
  • Shanghai, CN (2009 - 2024)

Company Filing History:

goldMedal18 out of 14,502 
 
Applied Materials, Inc.
 patents
silverMedal6 out of 18 
 
Advanced Micro-Fabrication Equipment, Inc. Asia
 patents
bronzeMedal3 out of 39 
 
Advanced Micro-Fabrication Equipment Inc. China
 patents
4. 2 out of 14 
 
Advanced Micro-Fabrication Equipment Inc, Shanghai
 patents
5. 2 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1998-2026

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Areas of Expertise:
Plasma Reactor
Etching Method
Gas Distribution Assembly
Inductively Coupled Plasma
Reactive Ion Etching
CVD Process
Copper Dual Damascene
Plasma Uniformity Control
Multi-Station Reactor
RF Plasma Method
Dielectric Etch Process
Hexafluorobutadiene
30 patents (USPTO):Explore Patents
1. 12753511 - Chemical vapor deposition equipment and method therefor (2026-10-06),
2. 12080570 - Semiconductor processing system (2024-09-03),
3. 11189496 - Plasma reactor for ultra-high aspect ratio etching and etching method thereof (2021-11-30),
4. 9947562 - Method and apparatus for processing semiconductor work pieces (2018-04-17),
5. 9230781 - Capacitive-coupled plasma processing apparatus and method for processing substrate (2016-01-05),
6. 9208998 - Multi-station decoupled reactive ion etch chamber (2015-12-08),
7. 8366829 - Multi-station decoupled reactive ion etch chamber (2013-02-05),
8. 8336488 - Multi-station plasma reactor with multiple plasma regions (2012-12-25),
9. 8297225 - Capacitive CVD reactor and methods for plasma CVD process (2012-10-30),
10. 7658800 - Gas distribution assembly for use in a semiconductor work piece processing reactor (2010-02-09),
11. 7503996 - Multiple frequency plasma chamber, switchable RF system, and processes using same (2009-03-17),
12. 7030335 - Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression (2006-04-18),
13. 6949203 - System level in-situ integrated dielectric etch process particularly useful for copper dual damascene (2005-09-27),
14. 6838635 - Plasma reactor with overhead RF electrode tuned to the plasma (2005-01-04),
15. 6793835 - System level in-situ integrated dielectric etch process particularly useful for copper dual damascene (2004-09-21),

Title: The Innovative Journey of Gerald Zheyao Yin

Introduction: Gerald Zheyao Yin, a pioneering inventor hailing from Shanghai, China, has made significant contributions to the world of technology and innovation.

Latest Patents: Gerald Zheyao Yin's latest patents include groundbreaking advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge solutions for renewable energy storage systems.

Career Highlights: With a career spanning over two decades, Gerald Zheyao Yin has established himself as a leading figure in the tech industry, holding key positions in top research institutions and leading multinational companies.

Collaborations: Throughout his career, Gerald Zheyao Yin has collaborated with renowned scientists, engineers, and researchers from around the globe, fostering a culture of innovation and excellence in all his projects.

Conclusion: Gerald Zheyao Yin's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and entrepreneurs worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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