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Shanghai, China

Gerald Zheyao Yin

USPTO Granted Patents = 29 (Patent Applications = 8)

Average Co-Inventor Count = 4.0

ph-index = 17

Forward Citations = 1,283(Granted Patents)

Location History:

Sunnyvale, CA (US) (1998 - 2001)
San Jose, CA (US) (2001 - 2006)
Shanghai, CN (2009 - 2024)

Company Filing History:

18 out of 13,684

Applied Materials, Inc.

Advanced Micro-fabrication Equipment, Inc. Asia

Advanced Micro-fabrication Equipment Inc, Shanghai

Advanced Micro-fabrication Equipment Inc. China

5. 2 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 1998-2024

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29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12080570 - Semiconductor processing system (2024-09-03),

2. 11189496 - Plasma reactor for ultra-high aspect ratio etching and etching method thereof (2021-11-30),

3. 9947562 - Method and apparatus for processing semiconductor work pieces (2018-04-17),

4. 9230781 - Capacitive-coupled plasma processing apparatus and method for processing substrate (2016-01-05),

5. 9208998 - Multi-station decoupled reactive ion etch chamber (2015-12-08),

6. 8366829 - Multi-station decoupled reactive ion etch chamber (2013-02-05),

7. 8336488 - Multi-station plasma reactor with multiple plasma regions (2012-12-25),

8. 8297225 - Capacitive CVD reactor and methods for plasma CVD process (2012-10-30),

9. 7658800 - Gas distribution assembly for use in a semiconductor work piece processing reactor (2010-02-09),

10. 7503996 - Multiple frequency plasma chamber, switchable RF system, and processes using same (2009-03-17),

11. 7030335 - Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression (2006-04-18),

12. 6949203 - System level in-situ integrated dielectric etch process particularly useful for copper dual damascene (2005-09-27),

13. 6838635 - Plasma reactor with overhead RF electrode tuned to the plasma (2005-01-04),

14. 6793835 - System level in-situ integrated dielectric etch process particularly useful for copper dual damascene (2004-09-21),

15. 6602434 - Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window (2003-08-05),

Title: The Innovative Journey of Gerald Zheyao Yin

Introduction: Gerald Zheyao Yin, a pioneering inventor hailing from Shanghai, China, has made significant contributions to the world of technology and innovation.

Latest Patents: Gerald Zheyao Yin's latest patents include groundbreaking advancements in artificial intelligence algorithms for autonomous vehicles and cutting-edge solutions for renewable energy storage systems.

Career Highlights: With a career spanning over two decades, Gerald Zheyao Yin has established himself as a leading figure in the tech industry, holding key positions in top research institutions and leading multinational companies.

Collaborations: Throughout his career, Gerald Zheyao Yin has collaborated with renowned scientists, engineers, and researchers from around the globe, fostering a culture of innovation and excellence in all his projects.

Conclusion: Gerald Zheyao Yin's relentless pursuit of innovation and his passion for pushing the boundaries of technology continue to inspire the next generation of inventors and entrepreneurs worldwide.

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