The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Apr. 30, 2021
Applicant:

Advanced Micro-fabrication Equipment Inc. China, Shanghai, CN;

Inventors:

Heng Tao, Shanghai, CN;

Gerald ZheYao Yin, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); B65G 47/90 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67167 (2013.01); B65G 47/90 (2013.01); H01L 21/67196 (2013.01); H01L 21/67126 (2013.01); H01L 21/67706 (2013.01); H01L 21/68707 (2013.01);
Abstract

A semiconductor processing system, including: an elongated transfer chamber including a middle portion, a first end portion disposed at a first end of the middle portion and a second end portion disposed at a second end of the middle portion, wherein at least two lateral semiconductor processing modules attach to the first and second sidewall of the middle portion; the second end portion of the transfer chamber is further attached with one end portion semiconductor processing module, the end portion semiconductor processing module including two process chambers, the two process chambers of the end portion semiconductor processing module being respectively connected to an end face of the second end portion via two air-tight valves; wherein a traverse distance (D) is provided between the two air-tight valves of the end portion semiconductor processing module, the width of the end face is greater than the traverse distance, and the spacing (D) between the first and sidewall.


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