The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 2015
Filed:
Sep. 14, 2012
Gerald Yin, Shanghai, CN;
Tuqiang NI, Shanghai, CN;
Jinyuan Chen, Shanghai, CN;
Xueyu Qian, Shanghai, CN;
Gerald Yin, Shanghai, CN;
Tuqiang Ni, Shanghai, CN;
Jinyuan Chen, Shanghai, CN;
Xueyu Qian, Shanghai, CN;
ADVANCED MICRO-FABRICATION EQUIPMENT INC, SHANGHAI, Shanghai, CN;
Abstract
A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.