The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Dec. 20, 2007
Aihua Chen, Shanghai, CN;
Yijun Liu, Shanghai, CN;
Jinyuan Chen, Shanghai, CH;
Lee Luo, Shanghai, CN;
Tuqiang NI, Shanghai, CN;
Gerald Yin, Shanghai, CN;
Henry Ho, Shanghai, CN;
Aihua Chen, Shanghai, CN;
Yijun Liu, Shanghai, CN;
Jinyuan Chen, Shanghai, CH;
Lee Luo, Shanghai, CN;
Tuqiang Ni, Shanghai, CN;
Gerald Yin, Shanghai, CN;
Henry Ho, Shanghai, CN;
Advanced Micro-Fabrication Equipment, Inc. Asia, Georgetown, Grand Cayman, KY;
Abstract
A plasma chamber is constructed to have a chamber body defining therein a plurality of process stations. A plurality of rotating substrate holders are each situated in one of the process stations and a plurality of in-situ plasma generation regions are each provided above one of the substrate holders. A plurality of quasi-remote plasma generation regions are each provided above a corresponding in-situ plasma generation region and being in gaseous communication with the corresponding in-situ plasma generation region. An RF energy source is coupled to each of the quasi-remote plasma generation regions.