The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 05, 2016

Filed:

Aug. 01, 2012
Applicants:

Zhongdu Liu, Shanghai, CN;

Gerald Zheyao Yin, Shanghai, CN;

Inventors:

Zhongdu Liu, Shanghai, CN;

Gerald Zheyao Yin, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H05H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32669 (2013.01); H01J 37/32091 (2013.01); H05H 1/46 (2013.01); H05H 2001/4675 (2013.01);
Abstract

The present invention relates to a capacitive-coupled plasma processing apparatus, wherein an electric field regulating element, i.e., an 'electric field lens', is arranged in the reaction chamber to generate a regenerated electric field in a direction opposite to that of the original radio frequency electric field in the reaction chamber, so that the non-uniformity of etching rate on the surface of the substrate of the plasma incurred by the original radio frequency electric field is decreased; and the electric field regulating element, i.e., the 'electric field lens', further decreases the equivalent quality factor Q value of the reaction chamber, expands the radio frequency band, and prevents high-voltage electric arcing. The present invention further provides a method for processing the substrate using the processing apparatus.


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