Miyagi, Japan

Fujio Masuoka


Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 380(Granted Patents)


Location History:

  • Minato-ku, Tokyo, JP (1993)
  • Sendai, Miyagi, JP (2005)
  • Sendai, JP (2004 - 2007)
  • Sendai-shi, Miyagi, JP (2003 - 2008)
  • Miyagi, Sendai-shi, JP (2008)

Company Filing History:


Years Active: 1993-2008

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15 patents (USPTO):Explore Patents

Title: Fujio Masuoka: A Pioneer in Semiconductor Technology

Introduction

Fujio Masuoka is a renowned inventor from Miyagi, Japan, known for his significant contributions to semiconductor technology. With a total of 15 patents to his name, Masuoka has played a crucial role in advancing memory storage devices.

Latest Patents

Masuoka's latest patents include innovative designs such as a memory cell unit, a nonvolatile semiconductor storage device, and a memory cell array driving method. The memory cell unit features a semiconductor substrate with a source diffusion layer and a column-shaped semiconductor layer that includes a drain diffusion layer and a low concentration impurity diffusion layer. This design allows for a unique arrangement of memory cells that are connected in series, enhancing the efficiency of data storage. Additionally, his semiconductor device patent describes a method for manufacturing a device with multiple island-shaped semiconductor layers, showcasing his expertise in creating advanced electronic components.

Career Highlights

Throughout his career, Fujio Masuoka has worked with notable companies, including Sharp Corporation. His work has significantly impacted the field of electronics, particularly in the development of nonvolatile memory technologies.

Collaborations

Masuoka has collaborated with esteemed colleagues such as Takuji Tanigami and Takashi Yokoyama, contributing to various projects that have pushed the boundaries of semiconductor innovation.

Conclusion

Fujio Masuoka's contributions to semiconductor technology have established him as a key figure in the industry. His innovative patents and collaborations continue to influence the development of advanced memory storage solutions.

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