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For the Inventor, By the Inventor

Miyagi, Japan

Fujio Masuoka

This inventor holds 15 USPTO granted patents, primarily in Semiconductor Memory. Top assignees: Sharp Kabushiki Kaisha Corporation, Fujio Masuoka, Other. Active years: 1993-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fujio Masuoka. Retrieved from https://idiyas.com/inventor/fujio-masuoka-or2w5a39

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 9

Forward Citations = 382(Granted Patents)


Location History:

  • Minato-ku, Tokyo, JP (1993)
  • Sendai, Miyagi, JP (2005)
  • Sendai, JP (2004 - 2007)
  • Sendai-shi, Miyagi, JP (2003 - 2008)
  • Miyagi, Sendai-shi, JP (2008)

Company Filing History:

goldMedal12 out of 25,982 
 
Sharp Kabushiki Kaisha Corporation
 patents
silverMedal3 out of 3 
 
Fujio Masuoka
 patents
bronzeMedal10 out of 834,601 
Other
 patents
where one patent can have more than one assignee

Years Active: 1993-2008

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Areas of Expertise:
Memory Cell Unit
Nonvolatile Storage
Semiconductor Device
Manufacturing Process
Portable Electronics
Ion Implantation
Charge Storage Layer
Floating Bias
Liquid Crystal Display
Semiconductor Substrate
Electron Microscopy
Programmable Semiconductor
15 patents (USPTO):Explore Patents
1. 7388245 - Semiconductor device, method for manufacturing the semiconductor device and portable electronic device provided with the semiconductor device (2008-06-17),
2. 7387935 - Memory cell unit, nonvolatile semiconductor storage device including memory cell unit, and memory cell array driving method (2008-06-17),
3. 7315059 - Semiconductor memory device and manufacturing method for the same (2008-01-01),
4. 7304343 - Semiconductor memory device and manufacturing method for the same (2007-12-04),
5. 7141506 - Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same (2006-11-28),
6. 7135726 - Semiconductor memory and its production process (2006-11-14),
7. 7088617 - Nonvolatile semiconductor storage device, and liquid crystal display device including the same (2006-08-08),
8. 7061038 - Semiconductor memory device and its production process (2006-06-13),
9. 7060598 - Method for implanting ions into semiconductor substrate (2006-06-13),
10. 7009888 - Low voltage, island-layer-based nonvolatile semiconductor storage device with floating biased memory cell channel (2006-03-07),
11. 6933556 - Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer (2005-08-23),
12. 6870215 - Semiconductor memory and its production process (2005-03-22),
13. 6727544 - Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer (2004-04-27),
14. 6593231 - Process of manufacturing electron microscopic sample and process of analyzing semiconductor device (2003-07-15),
15. 5245566 - Programmable semiconductor (1993-09-14),

Title: Fujio Masuoka: A Pioneer in Semiconductor Technology

Introduction

Fujio Masuoka is a renowned inventor from Miyagi, Japan, known for his significant contributions to semiconductor technology. With a total of 15 patents to his name, Masuoka has played a crucial role in advancing memory storage devices.

Latest Patents

Masuoka's latest patents include innovative designs such as a memory cell unit, a nonvolatile semiconductor storage device, and a memory cell array driving method. The memory cell unit features a semiconductor substrate with a source diffusion layer and a column-shaped semiconductor layer that includes a drain diffusion layer and a low concentration impurity diffusion layer. This design allows for a unique arrangement of memory cells that are connected in series, enhancing the efficiency of data storage. Additionally, his semiconductor device patent describes a method for manufacturing a device with multiple island-shaped semiconductor layers, showcasing his expertise in creating advanced electronic components.

Career Highlights

Throughout his career, Fujio Masuoka has worked with notable companies, including Sharp Corporation. His work has significantly impacted the field of electronics, particularly in the development of nonvolatile memory technologies.

Collaborations

Masuoka has collaborated with esteemed colleagues such as Takuji Tanigami and Takashi Yokoyama, contributing to various projects that have pushed the boundaries of semiconductor innovation.

Conclusion

Fujio Masuoka's contributions to semiconductor technology have established him as a key figure in the industry. His innovative patents and collaborations continue to influence the development of advanced memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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