The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Mar. 11, 2002
Tetsuo Endoh, Natori, JP;
Fujio Masuoka, Sendai-shi, Miyagi, JP;
Takuji Tanigami, Fukuyama, JP;
Takashi Yokoyama, Sendai, JP;
Noboru Takeuchi, Sendai, JP;
Other;
Abstract
A process of manufacturing an electron microscopic sample comprising the steps of: (a) forming a mask layer for covering an object region to be analyzed of a semiconductor layer and/or a conductive layer which have/has been patterned into a desired configuration; (b) reducing a periphery region surrounded the object region to be analyzed in a depth direction by using the mask layer; (c) removing the mask layer and forming an etch stop layer over the object region to be analyzed and the periphery region; and (d) polishing the semiconductor layer and/or the conductive layer in the object region to be analyzed down to the level of the surface of etch stop layer lying on the reduced periphery region.