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For the Inventor, By the Inventor

Fukuyama, Japan

Takuji Tanigami

This inventor holds 21 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Memory. Top assignees: Sharp Kabushiki Kaisha Corporation, Fujio Masuoka, Other. Active years: 1998-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takuji Tanigami. Retrieved from https://idiyas.com/inventor/takuji-tanigami

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 399(Granted Patents)


Location History:

  • Kitakatsuragi-gun, JP (1998 - 2000)
  • Kashihara, JP (2007)
  • Nara, JP (1998 - 2008)
  • Fukuyama, JP (2000 - 2008)

Company Filing History:

goldMedal18 out of 25,954 
 
Sharp Kabushiki Kaisha Corporation
 patents
silverMedal2 out of 3 
 
Fujio Masuoka
 patents
bronzeMedal10 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1998-2008

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Areas of Expertise:
Memory Cell Unit
Nonvolatile Semiconductor
Semiconductor Device
Manufacturing Method
Portable Electronic Device
Charge Storage Layer
Floating Gates
Ion Implantation
Groove Structures
Multiple Insulating Films
Electron Microscopic Sample
Plane Orientation
21 patents (USPTO):Explore Patents
1. 7388245 - Semiconductor device, method for manufacturing the semiconductor device and portable electronic device provided with the semiconductor device (2008-06-17),
2. 7387935 - Memory cell unit, nonvolatile semiconductor storage device including memory cell unit, and memory cell array driving method (2008-06-17),
3. 7315059 - Semiconductor memory device and manufacturing method for the same (2008-01-01),
4. 7304343 - Semiconductor memory device and manufacturing method for the same (2007-12-04),
5. 7141506 - Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same (2006-11-28),
6. 7135726 - Semiconductor memory and its production process (2006-11-14),
7. 7061038 - Semiconductor memory device and its production process (2006-06-13),
8. 7060598 - Method for implanting ions into semiconductor substrate (2006-06-13),
9. 6933556 - Semiconductor memory with gate at least partially located in recess defined in vertically oriented semiconductor layer (2005-08-23),
10. 6870215 - Semiconductor memory and its production process (2005-03-22),
11. 6727544 - Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer (2004-04-27),
12. 6724035 - Semiconductor memory with source/drain regions on walls of grooves (2004-04-20),
13. 6593231 - Process of manufacturing electron microscopic sample and process of analyzing semiconductor device (2003-07-15),
14. 6589844 - Process for manufacturing semiconductor memory device having floating and control gates in which multiple insulating films are formed over floating gates (2003-07-08),
15. 6544843 - Process for manufacturing semiconductor device (2003-04-08),

Title: Takuji Tanigami: A Pioneer in Nonvolatile Semiconductor Technologies

Introduction

Takuji Tanigami, hailing from Fukuyama, Japan, is a prolific inventor with an impressive portfolio of 21 patents. His contributions primarily revolve around advancements in nonvolatile semiconductor storage devices and memory cell technologies. Tanigami's innovative approaches have significantly influenced the field of electronics, paving the way for enhanced data storage solutions and novel semiconductor architectures.

Latest Patents

Tanigami's latest patents include a series of groundbreaking innovations. One notable invention is a memory cell unit designed for a nonvolatile semiconductor storage device. This invention features a semiconductor substrate with a source diffusion layer, a column-shaped semiconductor layer, and a unique arrangement of memory cells. Each memory cell is equipped with a charge storage layer and a control gate, showcasing a novel method of organizing memory cells in relation to a selection transistor.

Additionally, he has patented a semiconductor device characterized by the formation of two or more island-shaped semiconductor layers on the same substrate. This design distinctly incorporates steps in the sidewall of the first island-shaped layer, optimizing the element-expressing areas based on the stair-like structure. Such inventions illustrate Tanigami's forward-thinking approach and remarkable engineering skills.

Career Highlights

Throughout his career, Tanigami has held positions in notable companies, including Sharp Kabushiki Kaisha Corporation. His tenure at significant organizations has allowed him to contribute extensively to the development of state-of-the-art semiconductor technologies and to refine electrical engineering principles through practical application.

Collaborations

Tanigami's innovative journey has been enriched by collaborations with esteemed professionals such as Fujio Masuoka and Takashi Yokoyama. These partnerships have fostered an environment of shared knowledge and creativity, ultimately leading to remarkable advancements in semiconductor technology.

Conclusion

Takuji Tanigami stands as a testament to innovation in the semiconductor industry. His 21 patents reflect a deep commitment to advancing technology and improving data storage methods. As he continues to push the boundaries of what is possible within the realm of nonvolatile semiconductor devices, his work will undoubtedly inspire future developments within this vital field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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