The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Aug. 12, 2004
Applicants:
Fujio Masuoka, Sendai, JP;
Shinji Horii, Fukuyama, JP;
Takuji Tanigami, Fukuyama, JP;
Takashi Yokoyama, Fukuyama, JP;
Inventors:
Fujio Masuoka, Sendai, JP;
Shinji Horii, Fukuyama, JP;
Takuji Tanigami, Fukuyama, JP;
Takashi Yokoyama, Fukuyama, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the ions in one direction and applying a magnetic field parallel to a plane extending at a predetermined angle with respect to the one direction, thereby controlling a direction of the ion implantation to the side wall.