The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2008
Filed:
Mar. 07, 2005
Fujio Masuoka, Sendai-shi, Miyagi, JP;
Takashi Yokoyama, Hiroshima, JP;
Takuji Tanigami, Nara, JP;
Shinji Horii, Hiroshima, JP;
Fujio Masuoka, Sendai-shi, Miyagi, JP;
Takashi Yokoyama, Hiroshima, JP;
Takuji Tanigami, Nara, JP;
Shinji Horii, Hiroshima, JP;
Other;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device, which is characterized by that two or more island-shaped semiconductor layers including first and second island-shaped semiconductor layers are formed on the same substrate, at least the first island-shaped semiconductor layer has steps in its side wall so that sectional area of a cross section parallel to the surface of the substrate varies stepwise with respect to height in the vertical direction, the second island-shaped semiconductor layer is different from the first island-shaped semiconductor layer with respect to the presence/absence of a step in the side wall or the number of steps, and each of the first and second island-shaped semiconductor layers provides an element on a stair part of the side wall divided by the steps or on the side wall having no steps.