The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Dec. 04, 2003
Tetsuo Endoh, Natori, JP;
Fujio Masuoka, Sendai, JP;
Takuji Tanigami, Fukuyama, JP;
Takashi Yokoyama, Sendai, JP;
Shinji Horii, Sendai, JP;
Tetsuo Endoh, Natori, JP;
Fujio Masuoka, Sendai, JP;
Takuji Tanigami, Fukuyama, JP;
Takashi Yokoyama, Sendai, JP;
Shinji Horii, Sendai, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Fujio Masuoka, Miyagi, JP;
Abstract
The present invention provides a semiconductor memory device comprising: a first conductivity type semiconductor substrate; and a plurality of memory cells constituted of an island-like semiconductor layer which is formed on the semiconductor substrate, and a charge storage layer and a control gate which are formed entirely or partially around a sidewall of the island-like semiconductor layer, wherein the plurality of memory cells are disposed in series, the island-like semiconductor layer which constitutes the memory cells has cross-sectional areas varying in stages in a horizontal direction of the semiconductor substrate, and an insulating film capable of passing charges is provided at least in a part of a plane of the island-like semiconductor layer horizontal to the semiconductor substrate.