The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Jun. 20, 2002
Tetsuo Endoh, Natori, JP;
Fujio Masuoka, Sendai-shi, Miyagi, JP;
Takuji Tanigami, Fukuyama, JP;
Takashi Yokoyama, Sendai, JP;
Noboru Takeuchi, Fukuyama, JP;
Yoshihisa Wada, Fukuyama, JP;
Kota Sato, Fukuyama, JP;
Kazushi Kinoshita, Fukuyama, JP;
Tetsuo Endoh, Natori, JP;
Fujio Masuoka, Sendai-shi, Miyagi, JP;
Takuji Tanigami, Fukuyama, JP;
Takashi Yokoyama, Sendai, JP;
Noboru Takeuchi, Fukuyama, JP;
Yoshihisa Wada, Fukuyama, JP;
Kota Sato, Fukuyama, JP;
Kazushi Kinoshita, Fukuyama, JP;
Other;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor memory comprises: a first conductivity type semiconductor substrate and memory cells each constituted of an island-like semiconductor layer, a charge storage layer and a control gate, the charge storage layer and the control gate being formed to entirely or partially encircle a sidewall of the island-like semiconductor layer, wherein the memory cells are disposed in series, and the island-like semiconductor layer on which the memory cells are disposed has cross-sectional areas in a horizontal direction which vary stepwise.