Yoshihisa Wada

Title: Innovations of Yoshihisa Wada

Introduction

Yoshihisa Wada is a notable inventor based in Fukuyama, Japan. He has made significant contributions to the field of semiconductor technology, holding three patents that showcase his innovative spirit and technical expertise.

Latest Patents

Wada's latest patents include a semiconductor memory device and a manufacturing method for the same. This invention provides a semiconductor memory device featuring one or more protruding semiconductor layers formed on a semiconductor substrate of a first conductivity type. The device includes a plurality of memory cells on the surfaces of these protruding semiconductor layers. Each memory cell consists of a charge storage layer, a control gate, and an impurity diffusion layer of a second conductivity type. The memory cells are aligned in a predetermined direction, with the control gates placed to ensure separation from each other. Another significant patent is for a semiconductor memory that comprises a first conductivity type semiconductor substrate and memory cells constituted of an island-like semiconductor layer, a charge storage layer, and a control gate. The design allows the charge storage layer and control gate to encircle the sidewall of the island-like semiconductor layer, with memory cells disposed in series.

Career Highlights

Throughout his career, Yoshihisa Wada has worked with prominent companies, including Sharp Kabushiki Kaisha Corporation. His work has significantly impacted the development of semiconductor technologies, enhancing the efficiency and functionality of memory devices.

Collaborations

Wada has collaborated with notable coworkers such as Takuji Tanigami and Tetsuo Endoh. Their combined expertise has contributed to the advancement of semiconductor innovations.

Conclusion

Yoshihisa Wada's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced memory devices.