Zhubei, Taiwan

Fu-Hsiang Su

This inventor holds 20 USPTO granted patents and 21 published patent applications, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fu-Hsiang Su. Retrieved from https://idiyas.com/inventor/fu-hsiang-su

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Location History:

  • Hsinchu, TW (2020 - 2023)
  • Zhubei, TW (2020 - 2024)

Company Filing History:


Years Active: 2020-2026

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Insulating Cap
Contact Structure
Via Structure
Dielectric Wall
Spacers
Field Effect Transistor
Low Resistivity
Self-Aligned Contacts
Mask Layers
20 patents (USPTO):Explore Patents

Title: Fu-Hsiang Su: Innovator from Zhubei

Introduction: Fu-Hsiang Su is a renowned inventor hailing from Zhubei, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Fu-Hsiang Su holds several patents in the areas of electronics, software development, and renewable energy, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Fu-Hsiang Su has worked with leading tech companies, research institutions, and universities, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Throughout his career, Fu-Hsiang Su has collaborated with top inventors, patent attorneys, and companies worldwide, fostering a culture of innovation and knowledge-sharing within the industry.

Conclusion: Fu-Hsiang Su's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and entrepreneurs, solidifying his legacy as a true pioneer in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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