The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2026
Filed:
Apr. 11, 2024
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hong-Chih Chen, Changhua County, TW;
Fu-Hsiang Su, Zhubei City, TW;
Chia-Hao Kuo, Taoyuan City, TW;
Wen-Li Chiu, Kaohsiung City, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Shih-Hsun Chang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method for forming a semiconductor device structure includes forming a fin structure over a substrate. The method also includes forming a gate structure across the fin structure. The method also includes forming source/drain epitaxial structures over opposite sides of the gate structure. The method also includes forming a hard mask layer over the gate structure and the source/drain epitaxial structures. The method also includes removing a portion of the hard mask layer and the gate structure to form an opening. The method also includes laterally etching the gate structure to enlarge the opening under the hard mask layer. The method also includes depositing a shell material in the opening. The method also includes etching back the shell material to form a shell structure under the hard mask layer. The method also includes forming an isolation gate structure in the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile