The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
Aug. 01, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hong-Chih Chen, Hsinchu, TW;
Fu-Hsiang Su, Hsinchu, TW;
Shih-Hsun Chang, Hsinchu, TW;
Chia-Hao Kuo, Hsinchu, TW;
Chih-Ting Yeh, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor substrate, a plurality of metal portions, a plurality of nanosheet structures, and a plurality of isolation structures. The metal portions are disposed on the semiconductor substrate and are spaced apart from each other. The nanosheet structures are surrounded by the metal portions such that the nanosheet structures are spaced apart from each other. The isolation structures are disposed on the semiconductor substrate such that two adjacent ones of the metal portions are isolated from each other by a corresponding one of the isolation structures. Each of the isolation structures includes a first dielectric layer and an air gap surrounded by the first dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile