The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Mar. 14, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hong-Chih Chen, Changhua County, TW;

Chun-Yi Chang, Hsinchu City, TW;

Fu-Hsiang Su, Zhubei City, TW;

Shih-Hsun Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/121 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 64/017 (2025.01);
Abstract

A semiconductor device structure includes first nanostructures and second nanostructures formed over a substrate. The structure also includes gate structures that are wrapped around the first nanostructures and the second nanostructures and that extend along a first direction. The structure also includes a dielectric structure formed between two of the gate structures and parallel to the gate structures. A first sidewall of the first nanostructures is shifted from a first sidewall of the second nanostructures in a second direction, the second direction is different from the first direction.


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