The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Mar. 03, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hong-Chih Chen, Changhua County, TW;
Chun-Sheng Liang, Changhua County, TW;
Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;
Fu-Hsiang Su, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor structure includes a first dielectric wall, a first set of nanostructures and a second dielectric wall sequentially arranged in a first horizontal direction. A first gate electrode layer wraps around the first set of nanostructures. A source/drain feature adjoins the first set of nanostructures and is sandwiched between the first dielectric wall and the second dielectric wall. An inner spacer layer is interposed between the first gate electrode layer and the source/drain feature and between the first set of nanostructures. In a plan view, a first dimension of the inner spacer layer in the first horizontal direction is greater than a second dimension of the source/drain feature in the first horizontal direction.