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For the Inventor, By the Inventor

Munich, Germany

Franz Neppl

USPTO Granted Patents = 22

Average Co-Inventor Count = 2.3

ph-index = 13

Forward Citations = 761(Granted Patents)


Location History:

  • Munich, DE (1985 - 1992)
  • Ottobrunn, DE (1997)

Company Filing History:

goldMedal22 out of 30,040 
 
Siemens Aktiengesellschaft
 patents

Years Active: 1985-1997

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22 patents (USPTO):Explore Patents
1. 5597766 - Method for detaching chips from a wafer (1997-01-28),
2. 5100811 - Integrated circuit containing bi-polar and complementary MOS transistors (1992-03-31),
3. 5034338 - Circuit containing integrated bipolar and complementary MOS transistors (1991-07-23),
4. 5013678 - Method of making an integrated circuit comprising load resistors (1991-05-07),
5. 4960489 - Method for self-aligned manufacture of contacts between interconnects (1990-10-02),
6. 4912543 - Integrated semiconductor circuit having an external contacting track (1990-03-27),
7. 4906585 - Method for manufacturing wells for CMOS transistor circuits separated by (1990-03-06),
8. 4885617 - Metal-oxide semiconductor (MOS) field effect transistor having extremely (1989-12-05),
9. 4884117 - Circuit containing integrated bipolar and complementary MOS transistors (1989-11-28),
10. 4874717 - Semiconductor circuit containing integrated bipolar and MOS transistors (1989-10-17),
11. 4855245 - Method of manufacturing integrated circuit containing bipolar and (1989-08-08),
12. 4803179 - Methods for making neighboring wells for VLS1 CMOS components (1989-02-07),
13. 4782033 - Process for producing CMOS having doped polysilicon gate by outdiffusion (1988-11-01),
14. 4761384 - Forming retrograde twin wells by outdiffusion of impurity ions in (1988-08-02),
15. 4740479 - Method for the manufacture of cross-couplings between n-channel and (1988-04-26),

Title: Innovations of Franz Neppl in Semiconductor Technology

Introduction

Franz Neppl, a prominent inventor based in Munich, Germany, has made significant contributions to the field of semiconductor technology with a total of 22 patents to his name. His work primarily focuses on enhancing the efficiency and functionality of integrated circuits.

Latest Patents

Among his latest innovations is a method for detaching chips from a wafer, specifically designed for silicon-on-insulator (SOI) substrates. This method involves etching trenches between chips down to the insulating layer, producing spacers for passivation of SiO2 layers, followed by detaching the chips through the etching of the insulating layer.

Another notable patent details an integrated circuit that incorporates both bipolar and complementary MOS transistors. This invention optimizes the placement of base and emitter terminals for the bipolar transistor and gate electrodes for MOS transistors, all within one level of the circuit. The innovation ensures low base series resistance and reduces the overall space requirement, enabling smaller emitter widths. These advancements facilitate the production of high-performance very-large-scale integration (VLSI) circuits with enhanced switching speeds.

Career Highlights

Franz Neppl’s career is marked by his role at Siemens Aktiengesellschaft, where he has been instrumental in developing cutting-edge semiconductor technologies. His dedication to innovation has established him as a key figure in the industry.

Collaborations

Throughout his career, Neppl has collaborated with esteemed colleagues, including Ulrich Schwabe and Josef Winnerl. Together, they have pioneered advancements in semiconductor design and performance, further driving the industry forward.

Conclusion

Franz Neppl's contributions to the semiconductor field illustrate his innovative spirit and commitment to excellence. With a diverse portfolio of patents, he has played a crucial role in advancing technology at Siemens Aktiengesellschaft, solidifying his status as a leading inventor in the realm of integrated circuits.

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