The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 1997
Filed:
May. 20, 1994
Applicant:
Inventor:
Franz Neppl, Ottobrunn, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437226 ; 437 21 ; 437227 ; 437231 ; 148D / ; 148D / ; 148D / ;
Abstract
Method for detaching chips in the silicon layer of a SOI substrate, wherein trenches are etched between the chips down to the insulating layer of the SOI substrate. Spacers for the passivation of SiO.sub.2 layers of the chips are produced. Finally, the chips are detached by etching the insulating layer off.
Quick Actions:
Neppl, Franz. (1997). Method for detaching chips from a wafer (U.S. Patent No. 5597766). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5597766
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