The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1989
Filed:
Mar. 15, 1989
Applicant:
Inventors:
Franz Neppl, Munich, DE;
Josef Winnerl, Landshut, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 43 ; 357 42 ; 357 49 ; 357 50 ;
Abstract
A circuit which contains integrated bipolar and complementary MOS transistors, including wells in the substrate for forming the MOS transistors, the wells also containing isolated bipolar transistors, the wells forming the collector of the bipolar transistor and being surrounded by trenches which are filled with doped polycrystalline silicon. The doped trench reduces the lateral out diffusion from the wells and thus serves to increase the packing density while serving as a collector contact region. The invention is employed in the manufacture of integrated semiconductor circuits having high switching speeds.