The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1990
Filed:
Dec. 18, 1989
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
For self-aligned manufacture of contacts referred to as vias between interconnects that are contained in wiring levels arranged above one another in an integrated circuit, a pillar technique is employed where the contacts are produced before the deposition of an inter-metal dielectric to produce the pillar, a layer structure is produced that contains at least one metal layer for the lower wiring level and at least one conductive layer for the contacts. The longitudinal expanse of the contact is defined by a mask that reliably overlaps the desired width of the lower interconnect. The transversal expanse of the contact is defined by the mask needed for producing the lower interconnect. The contacts and the lower interconnects are produced by step-by-step etching.