The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1988
Filed:
May. 29, 1987
Franz Neppl, Munich, DE;
Erwin Jacobs, Vaterstetten, DE;
Josef Winnerl, Landshut, DE;
Carlos-Alberto Mazure-Espejo, Kirchseeon, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A method for the manufacture of LSI complementary MOS field effect transistor circuits to increase the latch-up hardness of the n-channel and p-channel field effect transistors while retaining good transistor properties by incorporating a further epitaxial layer and highly doped implantation regions into a lower epitaxial layer from which the wells are generated by out-diffusion into the upper epitaxial layer. In addition to achieving optimum transistor properties, the reduced lateral diffusion provided enables a lower n.sup.+ /p.sup.+ spacing, and thus achieves a higher packing density with improved latch-up hardness.