The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 1990
Filed:
Mar. 22, 1984
Franz Neppl, Munich, DE;
Ulrich Schwabe, Munich, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
An integrated semiconductor circuit including a substrate consisting of silicon having a heavily doped impurity layer formed thereon. An interconnect level consisting of aluminum or aluminum alloy is connected to the contact regions by means of an intermediate layer consisting of tantalum silicide. The tantalum content of the compound is greater than that required stoichiometrically to produce the intermetallic compound TaSi.sub.2. The interconnect level is preferably in the form of an aluminum or aluminum alloy-tantalum silicide double layer. The tantalum silicide layer simultaneously acts as a diffusion barrier and as a contacting material. The lifetime of the electrically conducting paths under temperature and current stress as well as the reliability of the contacts is significantly increased in VLSI circuits as a result of this metallization.