The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1988
Filed:
Jun. 16, 1986
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
Cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories (SRAMs) with buried contacts to the n.sup.+ and p.sup.+ regions in the substrate are obtained in accordance with known method steps and with a high packing density. A gate level thereof formed of a polycide double layer is used as an additional wiring level for the cross-coupling. The formation of the gate level occurs after the opening of regions for the buried contacts. A doping occurs simultaneously with the generation of source/drain regions of the n-channel and p-channel transistors by masked ion implantation and a subsequent high-temperature treatment. Accordingly, simple, mask-non-intensive method steps result which are especially useful in the manufacture of 6-transistor SRAMs.