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For the Inventor, By the Inventor

Bernau, Germany

Konrad Hieber

USPTO Granted Patents = 23

Average Co-Inventor Count = 2.1

ph-index = 14

Forward Citations = 505(Granted Patents)


Location History:

  • Munich, DE (1976 - 1985)
  • Bernau, DE (1985 - 1989)
  • Grasbrunn, DE (1996)
  • Neukeferloh, DE (1995 - 2000)

Company Filing History:

goldMedal23 out of 30,028 
 
Siemens Aktiengesellschaft
 patents

Years Active: 1976-2000

where 'Filed Patents' based on already Granted Patents

23 patents (USPTO):
1. 6057229 - Method for metallizing submicron contact holes in semiconductor bodies (2000-05-02),
2. 5526122 - Method for determining the mass flow of gases on the basis of optical (1996-06-11),
3. 5478780 - Method and apparatus for producing conductive layers or structures for (1995-12-26),
4. 5399389 - Method for locally and globally planarizing chemical vapor deposition of (1995-03-21),
5. 4810335 - Method for monitoring etching processes (1989-03-07),
6. 4767496 - Method for controlling and supervising etching processes (1988-08-30),
7. 4740479 - Method for the manufacture of cross-couplings between n-channel and (1988-04-26),
8. 4680612 - Integrated semiconductor circuit including a tantalum silicide diffusion (1987-07-14),
9. 4673968 - Integrated MOS transistors having a gate metallization composed of (1987-06-16),
10. 4640844 - Method for the manufacture of gate electrodes formed of double layers of (1987-02-03),
11. 4608271 - Method for the manufacture of metal silicide layers by means of reduced (1986-08-26),
12. 4592921 - Method for monitoring and regulating the composition and the layer (1986-06-03),
13. 4562089 - Method of measuring electric resistance of thin metallic layers (1985-12-31),
14. 4543576 - System for measuring electrical resistance and temperature during (1985-09-24),
15. 4510670 - Method for the manufacture of integrated MOS-field effect transistor (1985-04-16),

Title: Konrad Hieber: Innovator in Semiconductor Technology

Introduction

Konrad Hieber, based in Bernau, Germany, is a notable inventor with an impressive portfolio of 23 patents. His work primarily focuses on advancements in semiconductor technology, making significant contributions to the field.

Latest Patents

Among his latest innovations is a method for metallizing submicron contact holes in semiconductor bodies. This innovative approach allows for the metalization of these contact holes in a single operation. The process begins with the deposition of a titanium-rich layer, followed by a low-resistance titanium silicide layer. Remarkably, both layers are deposited in one contiguous CVD (Chemical Vapor Deposition) process within a single CVD chamber, streamlining the manufacturing process.

Career Highlights

Konrad Hieber is currently employed at Siemens Aktiengesellschaft, where he continues to develop cutting-edge technologies that advance the capabilities of semiconductor applications. His extensive experience and innovative mindset have solidified his reputation as a leading figure in his field.

Collaborations

Throughout his career, Hieber has collaborated with talented colleagues such as Franz Neppl and Norbert Mayer. These partnerships have contributed to the development of several groundbreaking technologies, showcasing the importance of teamwork in the innovation process.

Conclusion

Konrad Hieber's contributions to semiconductor technology underscore the significance of innovation in the ever-evolving tech landscape. With a significant number of patents to his name and ongoing collaborations, he continues to inspire future advancements in the industry.

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