The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 1985
Filed:
Oct. 22, 1984
Konrad Hieber, Bernau, DE;
Norbert Mayer, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A method of measuring the electrical resistance of thin metallic films manufactured under the influence of a plasma. The measurement proceeds by means of a direct current resistance measurement according to the principle of a two point or four point measuring method. The electrical resistance is determined either in the case of at least one measuring or test current, and the voltage connected to the measuring contacts is measured when no measuring or test current is sent through the film, or the electrical resistance is determined in the case of at least two different measuring or test currents of known magnitudes. The measuring methods are applied in the case of manufacture of metallic layers in semiconductor technology, in particular also for the measurement of the ion current injected in the film by the plasma as well as for the determination of variations in the coating rate.