The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Mar. 31, 1997
Applicant:
Inventors:
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438630 ; 438680 ; 438683 ; 438907 ; 438908 ;
Abstract
Submicron contact holes in semiconductor bodies are metalized in a single operation. A titanium-rich layer is first deposited, which is followed by a low-resistance TiSi.sub.2 layer. The two layers are thus deposited in one contiguous CVD process inside a single CVD chamber.
Hieber, Konrad. (2000). Method for metallizing submicron contact holes in semiconductor bodies (U.S. Patent No. 6057229). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6057229
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