The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1988
Filed:
Oct. 29, 1987
Konrad Hieber, Bernau, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
A method for controlling and supervising etching processes effected by ions, radicals, and/or neutral particles activated in a plasma includes identifying the etching rate and the final point of material erosion by the use of a reference substrate having a defined specimen geometry and situated on a moveable substrate holder in a recipient compartment or etching chamber. The electrical resistance of the specimen, which is dependent on the layer thickness of an electrically conductive layer, is measured and the measured data is transmitted in non-contacting fashion by electromagnetic radiation using pulse code modulation methods. A telemetric metrology system is used which is mounted on the moveable substrate holder as an independent unit. A process control computer supervises and, if need be, controls the etching parameters in the plasma.