The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 1995
Filed:
Jul. 20, 1993
Konrad Hieber, Neukeferloh, DE;
Jasper Von Tomkewitsch, Ottobrunn, DE;
Oswald Spindler, Vaterstetten, DE;
Helmuth Treichel, South Burlington, VT (US);
Zvonimir Gabric, Zorneding, DE;
Alexander Gschwandtner, Muenchen, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.