Munich, Germany

Ulrich Schwabe, Deceased

This inventor holds 1 USPTO granted patent. Top assignee: Siemens Aktiengesellschaft. Active years: 1988.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ulrich Schwabe, Deceased. Retrieved from https://idiyas.com/inventor/ulrich-schwabe-deceased

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 1988

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Ulrich Schwabe: Innovator in CMOS Technology

Introduction

Ulrich Schwabe was a notable inventor in the field of semiconductor technology, particularly known for his contributions to the development of cross-couplings in CMOS field effect transistors. His work has had a lasting impact on the design and manufacturing of static write-read memories (SRAMs).

Latest Patents

Ulrich Schwabe held a patent for a method that enhances the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors. This method allows for a high packing density in SRAMs with buried contacts to the n+ and p+ regions in the substrate. The patent outlines a process that utilizes a polycide double layer as an additional wiring level for cross-coupling, which simplifies the manufacturing steps involved.

Career Highlights

Throughout his career, Schwabe worked at Siemens Aktiengesellschaft, where he contributed significantly to advancements in semiconductor technology. His innovative methods have paved the way for more efficient manufacturing processes in the industry.

Collaborations

Schwabe collaborated with notable colleagues such as Franz Neppl and Konrad Hieber, who shared his vision for improving semiconductor technology. Their combined efforts have led to significant advancements in the field.

Conclusion

Ulrich Schwabe's contributions to the field of semiconductor technology, particularly in the area of CMOS transistors, have left a lasting legacy. His innovative methods continue to influence the manufacturing processes of SRAMs today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…