The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1989
Filed:
Nov. 02, 1988
Franz Neppl, Munich, DE;
Ulrich Schwabe, Munich, DE;
Siemens Aktiengesellschaft, Berlin and Munich, DE;
Abstract
Integrated semiconductor circuits with at least one bipolar transistor (17) and at least one MOS field effect transistor (18) on a chip wherein contacts from a metal interconnect level to diffused active emitter (8) and collector (5) regions of the bipolar transistor (17) as well as the gate electrode (9) of the MOS transistor are composed of a high melting point silicide, such as tantalum, tungsten, molybenum or titanium silicide, are disclosed, along with a method of producing such circuits. In addtion to achieving independence from a metallization grid and achieving low-resistance wiring, the use of the silicide, in conjunction with the high temperature stability of silicides, enables its simultaneous use as an implantation mask. The invention allows the production of bipolar/MOS components on a chip without added outlay.